4-Point Resistivity Measurements of Silicon-Carbide Nanowires

dc.contributor.advisor	Dunham, Doug J.
dc.contributor.author	Steinke, Kelsey
dc.contributor.author	Kohl-Blomsness, Nokoma
dc.contributor.author	Tollefson, Kyle
dc.date.accessioned	2016-04-22T16:54:20Z
dc.date.available	2016-04-22T16:54:20Z
dc.date.issued	2015-04
dc.identifier.uri	http://digital.library.wisc.edu/1793/74818
dc.description	Color poster with text, photographs, images, and charts.	en
dc.description.abstract	The purpose of this study was to the electrical properties of silicon carbide nanowires, specifically resistivity, as well as being able to control the resistivity of the wires to make electrical devices.	en
dc.description.sponsorship	University of Wisconsin--Eau Claire Office of Research and Sponsored Programs	en
dc.language.iso	en_US	en
dc.relation.ispartofseries	USGZE AS589	en
dc.subject	Silicon carbide	en
dc.subject	Nanowires	en
dc.subject	Posters	en
dc.title	4-Point Resistivity Measurements of Silicon-Carbide Nanowires	en
dc.type	Presentation	en