Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding

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Date
2001Author
Moran, Peter D.
Chow, David
Hunter, Andrew
Kuech, Thomas F.
Publisher
American Institute of Physics
Metadata
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http://digital.library.wisc.edu/1793/10622Description
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Citation
The following article appeared in Moran, P.D., Chow, D., Hunter, A., & Kuech, T.F. (2001). Fabrication Of In As/Al Sb/Ga Sb Heterojunction Bipolar Transistors On Al2 O3 Substrates By Wafer Bonding. Applied Physics Letters, 78(15), 2232-4. and may be found at http://link.aip.org/link/?apl/78/2232