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dc.contributor.authorKim, Jong Kyuen_US
dc.contributor.authorLee, Jong-Lamen_US
dc.contributor.authorRickert, Kimberly Anneen_US
dc.contributor.authorEllis, Arthur B.en_US
dc.contributor.authorHimpsel, Franz J.en_US
dc.contributor.authorDwikusuma, Fransiskaen_US
dc.contributor.authorKuech, Thomas F.en_US
dc.date.accessioned2007-07-13T19:29:34Z
dc.date.available2007-07-13T19:29:34Z
dc.date.issued2002en_US
dc.identifier.citationThe following article appeared in Jong, K. Kyu, L.J.L., Rickert, K.A., Ellis, A.B., Himpsel, F.J., Dwikusuma, F., et al. (2002). X Ray Photoemission Determination Of The Schottky Barrier Height Of Metal Contacts To N Ga N And P Ga N. Journal Of Applied Physics, 92(11), 6671-6678. and may be found at http://link.aip.org/link/?jap/92/6671en_US
dc.identifier.urihttp://digital.library.wisc.edu/1793/10610
dc.descriptionThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.format.extent274148 bytes
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/pdf
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.ispartofhttp://www.aip.orgen_US
dc.relation.ispartofhttp://jap.aip.orgen_US
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en_US
dc.titleX-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaNen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.1518129en_US


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